Heat-resistant insulating film, raw substrate for printed wiring board using the same and method for producing the substrate
Patent 6228467 Issued on May 8, 2001. Estimated Expiration Date: 
September 21, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
September 21, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of producing biaxially oriented tubular polyetheretherketone films Heat-resistant film and production process thereof Metal-film laminate resistant to delamination Patent #: 6060175 InventorsAssigneeApplicationNo. 381283 filed on 09/21/1999US Classes:428/209, Including metal layer174/258, Insulating428/320.2, Composite having a component wherein a constituent is liquid or is contained within preformed walls (e.g., impregnant-filled, previously void containing component, etc.)428/413Of epoxy etherExaminersPrimary: Lam, Cathy F.Attorney, Agent or FirmInternational ClassB32B 003/00Foreign Application Priority Data1998-01-21 JPAbstractA base plate for a printed circuit board, having a conductive foil heat-bonded to at least one side of a film insulator which comprises from 65 to 35 wt % of a polyarylketone resin and from 35 to 65 wt % of a non-crystalline polyether imide resin and of which the glass transition temperature is from 150 to 230° C. and the peak temperature of crystal fusion is at least 260° C., as measured when the temperature is raised in the differential scanning calorimetry, if necessary after forming a through-hole and filling a conductive paste therein, and of which, after the heat bonding, the heat of crystal fusion ƊHm and the heat of crystallization ƊHc generated by crystallization during the temperature rise, as measured when the temperature is raised by the differential scanning calorimetry, satisfy the following relation:[(ƊHm-ƊHc)/ƊHm]ࣘ0.5. | |
