Aluminum nitride sintered body, method of producing thereof, electrostatic chuck, susceptor, dummy wafer, clamp ring and particle catcher using the same
July 8, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSinterable aluminum nitride composition, sintered body from this composition and process for producing the sintered body Aluminum nitride sintered body and production thereof Method for manufacturing an aluminum nitride sintered body Aluminum nitride sintered body with high thermal conductivity and its preparation Aluminum nitride sintered body and its production method Low temperature sintered, resistive aluminum nitride ceramics Sintered aluminum nitride Semi-insulating aluminum nitride sintered body Aluminum nitride based composite body electronic functional material, electrostatic chuck and method of producing aluminum nitride based composite body Aluminum nitride sintered body, metal embedded article, electronic functional material and electrostatic chuck Patent #: 6001760 InventorsAssigneeApplicationNo. 349710 filed on 07/08/1999US Classes:501/98.4, Aluminum nitride containing (AIN)264/653Including plural heating stepsExaminersPrimary: Group, KarlAttorney, Agent or FirmForeign Patent References
International ClassC04B 035/581Foreign Application Priority Data1998-07-08 JPAbstractThe aluminum nitride sintered body of the invention has a thermal conductivity equivalent to that of a high purity aluminum nitride sintered body and a volume resistivity of 1014 Ω⋅cm or less, and is composed of aluminum nitride phase and yttrium aluminum oxide phase formed at grain boundaries of aluminum nitride phase, where the yttrium aluminum oxide phase is 0.5 to 10 wt % in extremes for aluminum nitride phase, and contains at least one kind of lanthanide element 0.1 to 20 atom % in extremes for yttrium element. | |
