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Sample inspection system

Patent 6201601 Issued on March 13, 2001. Estimated Expiration Date: Icon_subject September 19, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Surface pit detection system and method
Patent #: 4794265
Issued on: 12/27/1988
Inventor: Quackenbos ,   et al.

Surface analysis system and method
Patent #: 4893932
Issued on: 01/16/1990
Inventor: Knollenberg

Particle detection on patterned wafers and the like
Patent #: 4898471
Issued on: 02/06/1990
Inventor: Vaught, et al.

Method and apparatus for inspection of substrates
Patent #: 4929845
Issued on: 05/29/1990
Inventor: Amir, et al.

Surface pit and mound detection and discrimination system and method
Patent #: 5389794
Issued on: 02/14/1995
Inventor: Allen, et al.

Surface scanner with thin film gauge
Patent #: 5416594
Issued on: 05/16/1995
Inventor: Gross, et al.

Microelectronics inspection system
Patent #: 5424838
Issued on: 06/13/1995
Inventor: Siu

Optical wafer positioning system
Patent #: 5530550
Issued on: 06/25/1996
Inventor: Nikoonahad, et al.

Optical scanning system utilizing an atomic force microscope and an optical microscope
Patent #: 5650614
Issued on: 07/22/1997
Inventor: Yasutake, et al.

Single laser bright field and dark field system for detecting anomalies of a sample Patent #: 5798829
Issued on: 08/25/1998
Inventor: Vaez-Iravani

Inventors

Assignee

Application

No. 933771 filed on 09/19/1997

US Classes:

356/237.4, On patterned or topographical surface (e.g., wafer, mask, circuit board)356/237.5On patterned or topographical surface (e.g., wafer, mask, circuit board)

Examiners

Primary: Pham, Hoa Q.

Attorney, Agent or Firm

Foreign Patent References

  • PCT US 9615354 WO. 09/13/1996
  • PCT US 9704134 WO. 03/13/1997

International Class

G01N 021/00

Abstract

A curved mirrored surface is used to collect radiation scattered by a sample surface and originating from a normal illumination beam and an oblique illumination beam. The collected radiation is focused to a detector. Scattered radiation originating from the normal and oblique illumination beams may be distinguished by employing radiation at two different wavelengths, by intentionally introducing an offset between the spots illuminated by the two beams or by switching the normal and oblique illumination beams on and off alternately. Beam position error caused by change in sample height may be corrected by detecting specular reflection of an oblique illumination beam and changing the direction of illumination in response thereto. Butterfly-shaped spatial filters may be used in conjunction with curved mirror radiation collectors to restrict detection to certain azimuthal angles.

Other References

  • "Surface Inspection System for Estimation of Wafer," Y. Yatsugake et al., Hitachi Electronics Engineering Technical Report, vol. 11, Jan. 1996, pp. 21-26
  • Figure, Hitachi Electronics Engineering Co., Ltd., presented by Etsuro Morita of Mitsubishi Materials Silicon Corp. in a presentation entitled "Exploration of COP and COP Defect Crystal Originated `Particles`," at the Sixth International Workshop on 300 Millimeter Wafers on Dec. 5, 1996 in Makuhari, Japa
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