Boosted sensing ground circuit
Patent 6198677 Issued on March 6, 2001. Estimated Expiration Date: 
December 29, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
December 29, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSensing circuit for semiconductor memory with limited bitline voltage swing Semiconductor memory device Semiconductor memory device Sense amplifier including MOS transistors having threshold voltages controlled dynamically in a semiconductor memory device Memory device with current limiting feature Patent #: 5949729 InventorsApplicationNo. 221629 filed on 12/29/1998US Classes:365/203, Precharge365/207Differential sensingExaminersPrimary: Dinh, Son T.Attorney, Agent or FirmInternational ClassG11C 007/00AbstractA new noise control circuit which connects the sense ground node to ground in two specific period of times so that the NSA bouncing is minimized. Preferably these two periods are at the beginning of setting the n-type latch and when the data is transferring and CSL is switching. A pulse of NSET and together with whole CSLEN signal are used to activate the noise control circuit. The noise control circuit can also include a n-FET diode with its gate connected to the source and its drain tied to the Vbleq power supply. It is more preferable to use a low threshold voltage of n-FET device with Vt at 0.55 volts to form the clamp diode.Other References
| |
