Method for deposition of a conformal layer on a substrate
March 20, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod and apparatus for deposition of tungsten silicides Interlayer dielectric process Thin film forming apparatus and method Plasma processor and method for IC fabrication Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition Method for etch of GaAs CVD of silicon oxide using TEOS decomposition and in-situ planarization process Process for PECVD of silicon oxide using TEOS decomposition Method of depositing directly activated species onto a remotely located substrate Plasma enhanced chemical vapor processing system using hollow cathode effect InventorApplicationNo. 045278 filed on 03/20/1998US Classes:427/569, Plasma (e.g., corona, glow discharge, cold plasma, etc.)257/E21.243, Planarization of insulating layer (EPO)257/E21.279, On silicon body (EPO)427/579Silicon oxides or nitridesExaminersPrimary: Beck, ShriveAssistant: Chen, Bret Attorney, Agent or FirmForeign Patent References
International ClassH05H 001/24AbstractA method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition gases into the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased without increasing the pressure therein. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same. | |
