Method of fabricating thin film transistors for a liquid crystal display
May 13, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesThin film solar cell Method of making a thin film transistor by overlapping annealing using lasers Method of manufacturing polycrystalline silicon thin film Method of manufacturing semiconductor device having different orientations of crystal channel growth Semiconductor device having a crystallized silicon thin film in which the crystallization direction is oriented either vertically or horizontally to the current flow direction Thin film transistors for the peripheral circuit portion and the pixel portion Thin film semiconductor device manufacturing method Method for fabricating thin film transistor device Method of manufacturing liquid crystal display device Semiconductor device InventorAssigneeApplicationNo. 311702 filed on 05/13/1999US Classes:438/150, Specified crystallographic orientation257/E21.134, Using a coherent energy beam, e.g., laser or electron beam (EPO)257/E21.413, Lateral single gate single channel transistor with noninverted structure, i.e., channel layer is formed before gate (EPO)257/E29.004, With specified crystalline planes or axis (EPO)257/E29.299, Characterized by property or structure of channel or contact thereto (EPO)438/30, Liquid crystal component438/166Including recrystallization stepExaminersPrimary: Niebling, John F.Assistant: Simkovic, Viktor Attorney, Agent or FirmForeign Patent References
International ClassH01L 021/00Foreign Application Priority Data1998-06-09 KRAbstractA method of fabricating a thin film transistor (TFT) for a liquid crystal display (LCD) device having a drive circuit and a pixel array formed on the same substrate. The method includes forming a polycrystalline silicon layer by growing silicon grains from an amorphous silicon layer using the technique of sequential lateral solidification so that the silicon grains are oriented in a first direction, forming an active layer by patterning the polycrystalline layer, the active layer defining channel directions of the TFTs which are inclined at a predetermined angle with respect to the first direction, and forming the TFTs on the active layer. The method enhances the uniformity of the physical characteristics of the TFTs formed on the substrate.Other References
Field of SearchOn insulating substrate or layer (e.g., TFT, etc.)Specified crystallographic orientation Having insulated gate Combined with electrical device not on insulating substrate or layer Complementary field effect transistors Complementary field effect transistors And additional electrical device on insulating substrate or layer Vertical channel Plural gate electrodes (e.g., dual gate, etc.) Inverted transistor structure | |
