Programmable analog arithmetic circuit for imaging sensor
March 26, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesIntegrating photosensor and imaging system having wide dynamic range Integrating imaging systgem having wide dynamic range with sample/hold circuits Amplifier type image sensor with shutter operation High temperature photodetector array A-dual band IR sensor having two monolithically integrated staring detector arrays for simultaneous, coincident image readout Successive approximation analog-to-digital converter using balanced charge integrating amplifiers CMOS active pixel sensor type imaging system on a chip On-focal-plane analog-to-digital conversion for current-mode imaging devices Quantum efficiency improvements in active pixel sensors Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter InventorAssigneeApplicationNo. 277617 filed on 03/26/1999US Classes:250/208.1, Plural photosensitive image detecting element arrays341/155, Analog to digital conversion348/294, Solid-state image sensor348/302, X - Y architecture348/308Including switching transistor and photocell at each pixel site (e.g., "MOS-type" image sensor)ExaminersPrimary: Epps, GeorgiaAssistant: Spector, David N. Attorney, Agent or FirmForeign Patent References
International ClassH01L 027/00AbstractA programmable arithmetic circuit to form multiple circuit modules for different arithmetic operations that share certain common electronic elements to reduce the number of elements. Such circuit can be integrated to an imaging sensor array such as a CMOS active pixel sensor array to form arithmetic operations and analog-to-digital conversion for imaging processing.Field of SearchPlural photosensitive image detecting element arraysIncluding noise or undesired signal reduction In charge coupled type sensor Solid-state image sensor X - Y architecture With charge transfer type output register With charge transfer type selecting register Photosensitive switching transistors or "static induction" transistors Including switching transistor and photocell at each pixel site (e.g., "MOS-type" image sensor) Exclusively passive light responsive elements in the matrix With diode in series with photocell Charge-coupled architecture With staggered or irregular photosites or specified channel configuration Analog to digital conversion | |
