Method of writing, erasing, and controlling memory for memory device
August 30, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesFlash eeprom system Method for wear leveling in a flash EEPROM memory Method for detaching sectors in a flash EEPROM memory array Flash memory card with a ready/busy mask register Solid state peripheral storage device Method and circuitry for detecting lost sectors of data in a solid state memory disk Flash solid state drive that emulates a disk drive and stores variable length and fixed lenth data blocks Method of managing defects in flash disk memories Method of controlling clean-up of a solid state memory disk storing floating sector data Patent #: 5479633 InventorsApplicationNo. 385998 filed on 08/30/1999US Classes:711/103Programmable read only memory (PROM, EEPROM, etc.)ExaminersPrimary: Robertson, David L.Attorney, Agent or FirmForeign Patent References
International ClassG06F 013/00Foreign Application Priority Data1993-10-01 JPAbstractData transferred from a host computer to a memory device is written into sectors whose addresses in a memory area are decoded by a decode table. Old data to be updated by the above data is erased or marked with erase flags. At a predetermined point of time, in order to create free areas, necessary data is evacuated to a primary memory media and unnecessary data indicated by erase flags is erased by a unit of predetermined memory size. Part of the memory media which has become defective is marked with a defect flag, and is replaced by an alternate area. In doing so, the decode table is rewritten to rearrange the memory area. | |
