Programmable memory cell structure including a refractory metal barrier layer
Universal memory element and method of programming same Patent #: 5912839
ApplicationNo. 289713 filed on 04/12/1999
US Classes:365/163, Amorphous (electrical)365/185.03Multiple values (e.g., analog)
ExaminersPrimary: Nelms, David C.
Assistant: Lam, David
Attorney, Agent or Firm
International ClassG11C 011/00
AbstractA universal memory element having multi-level, non-detectable states and methods and apparatus for programming the same, and methods and applications embodying the same in neural networks, artificial intelligence and data storage systems. The universal memory element is programmed by applying one or more sub-interval energy pulses insufficient to switch the memory element from said high resistance state to said low resistance state, but sufficient to modify the memory material such that accumulation of additional energy pulses causes the memory element to switch from said high resistance state to said low resistance state.