Semiconductor physical-quantity sensor having a locos oxide film, for sensing a physical quantity such as acceleration, yaw rate, or the like
October 11, 2015. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSemiconductor vibration detection device with lever structure Semiconductor sensor of electrostatic capacitance type Method for fabricating monolithic chip containing integrated circuitry and suspended microstructure Mechanical force sensing semiconductor device Semiconductor yaw rate sensor Semiconductor accelerometer Semiconductor acceleration sensor with beam structure Mechanical force sensing semiconductor device Acoustic transducer chip Dynamic quantity sensor InventorsAssigneeApplicationNo. 540833 filed on 10/11/1995US Classes:257/417, Strain sensors257/415, Physical deformation257/419With thinned central active portion of semiconductor surrounded by thick insensitive portion (e.g. diaphragm type strain gauge)ExaminersPrimary: Hardy, David B.Assistant: Wilson, Neill R. Attorney, Agent or FirmForeign Patent References
International ClassH01L 029/82Foreign Application Priority Data1994-10-28 JPAbstractThe present invention provides a semiconductor physical-quantity sensor which can perform measurement of high accuracy without occurrence of deformation or displacement of a fixed electrode for vibration use even if voltage applied to the fixed electrode for vibration use is changed, and which can increase a dielectric breakdown voltage between the fixed electrode for vibration use and a substrate without varying a thickness of an insulative sacrificial layer or causing sacrificial-layer etching time to be affected. A semiconductor physical-quantity sensor according to the present invention forms an electrode-anchor portion on a sufficiently thick insulation film and causes dielectric breakdown voltage with a semiconductor substrate to be increased. In particular, the sufficiently thick insulation film is given by a LOCOS oxide film formed during sensor detection-circuit fabrication or separation of a diffusion electrode.Other References
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