ApplicationNo. 360532 filed on 07/26/1999
US Classes:438/692, Simultaneous (e.g., chemical-mechanical polishing, etc.)156/345.12, With mechanical polishing (i.e., CMP-chemical mechanical polishing)438/745Liquid phase etching
ExaminersPrimary: Powell, William A.
Attorney, Agent or Firm
International ClassH01L 021/00
AbstractA polishing apparatus including a plurality of polishing pads on respective rotating platens. The polishing platens, and therefore the attached pads also, may be of substantially different diameters. Multiple wafer heads can simultaneously polish multiple wafers on the multiple polishing pads or at different positions on one of the pads. The wafer heads are suspended from a rotatable carousel, which provides positioning of the heads relative to the polishing surfaces. Additionally, a loading/unloading station is provided. The carousel selectively positions the heads on the polishing surfaces, or positions one of the heads over the loading/unloading station while the remaining heads are located over polishing stations for substrate polishing, at which positions the wafers can be polished. The carousel can rotate to sweep all wafer heads attached thereto over respective polishing pads that they overlie.
Field of SearchCombined mechanical and chemical material removal
Simultaneous (e.g., chemical-mechanical polishing, etc.)
Utilizing particulate abradant
Liquid phase etching
PLANARIZING A NONPLANAR SURFACE
Using film of etchant between a stationary surface and a moving surface (e.g., chemical lapping, etc.)
Etchant contains solid particle (e.g., abrasive for polishing, etc.)
Glass or stone abrading