Semiconductor device having a substrate, an undoped silicon oxide structure, and an overlying doped silicon oxide structure with a side wall terminating at the undoped silicon oxide structure
January 13, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References(RIE) Plasma process for making metal-semiconductor ohmic type contacts Dry etch of phosphosilicate glass with selectivity to undoped oxide Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers Contact structure for improving photoresist adhesion on a dielectric layer Method of etching an oxide layer Method of etching an oxide layer Plasma etching of semiconductors Non-photolithographic etch mask for submicron features Method for etching dielectric using fluorohydrocarbon gas, NH3 -generating gas, and carbon-oxygen gas InventorsApplicationNo. 231346 filed on 01/13/1999US Classes:257/644, At least one layer of glass257/650, Insulating layer of glass257/E21.252, By dry-etching (EPO)257/E21.577By forming via holes (EPO)ExaminersPrimary: Hardy, David B.Attorney, Agent or FirmInternational ClassH01L 023/58AbstractAn etchant including C2 Hx Fy, where x is an integer from two to five, inclusive, where y is an integer from one to four, inclusive, and where x plus y equals six. The etchant etches doped silicon dioxide with selectivity over both undoped silicon dioxide and silicon nitride. Thus, undoped silicon dioxide and silicon nitride may be employed as etch stops in dry etch processes which utilize the C2 Hx Fy -containing etchant. C2 Hx Fy may be employed as either a primary etchant or as an additive to another etchant or etchant mixture. The invention also includes semiconductor devices that include structures that have been patterned with an etchant of the present invention or in accordance with the method of the present invention. Specifically, the present invention includes semiconductor devices including doped silicon oxide structures with substantially vertical sidewalls and adjacent undoped silicon oxide or silicon nitride structures exposed adjacent the sidewall. | |
