Silicon-on-insulator structure for electrostatic discharge protection and improved heat dissipation
Patent 6121661 Issued on September 19, 2000. Estimated Expiration Date: 
March 21, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
March 21, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesIntegrated circuit device particularly adapted for high voltage applications One-transistor one-capacitor memory cell structure for DRAMs Patent #: 5442211 InventorsApplicationNo. 822440 filed on 03/21/1997US Classes:257/355, With overvoltage protective means257/104, TUNNELING PN JUNCTION (E.G., ESAKI DIODE) DEVICE257/347, Single crystal semiconductor layer on insulating substrate (SOI)257/350, Insulated electrode device is combined with diverse type device (e.g., complementary MOSFETs, FET with resistor, etc.)257/360, Protection device includes insulated gate transistor structure (e.g., combined with resistor element)257/E21.703, Substrate is semiconductor body (EPO)257/E23.105, Wire-like or pin-like cooling fins or heat sinks (EPO)257/E27.112Including insulator on semiconductor, e.g. SOI (silicon on insulator) (EPO)ExaminersPrimary: Loke, StevenAttorney, Agent or FirmInternational ClassesH01L 023/62H01L 027/01 H01L 027/12 H01L 029/861 AbstractDoped polysilicon plugs are formed in contact with MOSFET device regions and passing through the buried oxide region into the opposite type silicon substrate of an SOI structure. The polysilicon plugs are in contact with the sources and drains of the MOSFET devices to provide paths for dissipating positive and negative ESD stresses. In addition, the polysilicon plugs provide a thermal dissipation pathway for directing heat away from the circuitry, and provide a diode for the structure.Field of SearchSingle crystal semiconductor layer on insulating substrate (SOI)Insulated electrode device is combined with diverse type device (e.g., complementary MOSFETs, FET with resistor, etc.) With overvoltage protective means For protecting against gate insulator breakdown Protection device includes insulated gate transistor structure (e.g., combined with resistor element) TUNNELING PN JUNCTION (E.G., ESAKI DIODE) DEVICE Reverse bias tunneling structure (e.g., "backward" diode, true Zener diode) AVALANCHE DIODE (E.G., SO-CALLED "ZENER" DIODE HAVING BREAKDOWN VOLTAGE GREATER THAN 6 VOLTS) Conductive filling in dielectric-lined groove (e.g., polysilicon backfill) | |
