Plasma processing tools, dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchers
November 5, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod and apparatus for plasma etching Method and apparatus for producing magnetically-coupled planar plasma Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window Radio frequency induction/multipole plasma processing tool Method and apparatus for protection of conductive surfaces in a plasma processing reactor Reaction chamber design to minimize particle generation in chemical vapor deposition reactors Plasma process apparatus including ground electrode with protection film Stationary focus ring for plasma reactor Plasma processor for large workpieces Adjustable dc bias control in a plasma reactor InventorsApplicationNo. 435237 filed on 11/05/1999US Classes:438/710, By creating electric field (e.g., plasma, glow discharge, etc.)156/345.48, With radio frequency (rf) antenna or inductive coil gas energizing means438/729, Using specified electrode/susceptor configuration (e.g., of multiple substrates using barrel-type susceptor, planar reactor configuration, etc.) to generate plasma438/735Differential etching of semiconductor substrateExaminersPrimary: Powell, William A.Attorney, Agent or FirmForeign Patent References
International ClassH01L 021/00AbstractPlasma processing tools, dual-source plasma etchers, and etching methods are described. In one embodiment, a processing chamber is provided having an interior base and an interior sidewall joined with the base. A generally planar inductive source is mounted proximate the chamber. A dielectric liner is disposed within the chamber over the interior sidewall with the liner being received over less than an entirety of the interior sidewall. In a preferred embodiment, the interior sidewall has a groundable portion and the dielectric liner has a passageway positioned to expose the groundable interior sidewall portion. Subsequently, a plasma developed within the chamber is disposed along a grounding path which extends to the exposed interior sidewall. In another preferred embodiment, the dielectric liner is removably mounted within the processing chamber.Other References
Field of SearchUsing plasmaUsing coil to generate the plasma Silicon containing substrate is glass By creating electric field (e.g., plasma, glow discharge, etc.) Silicon Using specified electrode/susceptor configuration (e.g., of multiple substrates using barrel-type susceptor, planar reactor configuration, etc.) to generate plasma Differential etching of semiconductor substrate | |
