U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Electro deposition chemistry

Patent 6113771 Issued on September 5, 2000. Estimated Expiration Date: Icon_subject July 13, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

2742413

2882209

3727620

3770598

Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water
Patent #: 4027686
Issued on: 06/07/1977
Inventor: Shortes ,   et al.

Apparatus for washing semiconductor wafers
Patent #: 4092176
Issued on: 05/30/1978
Inventor: Kozai, et al.

Electrodeposition of copper
Patent #: 4110176
Issued on: 08/29/1978
Inventor: Creutz, deceased ,   et al.

Spin coating process
Patent #: 4113492
Issued on: 09/12/1978
Inventor: Sato ,   et al.

Molten salt lithium cells
Patent #: 4315059
Issued on: 02/09/1982
Inventor: Raistrick ,   et al.

Electrodeposition of bright copper
Patent #: 4336114
Issued on: 06/22/1982
Inventor: Mayer ,   et al.

More ...

Inventors

Application

No. 114865 filed on 07/13/1998

US Classes:

205/123, Product is semiconductor or includes semiconductor106/1.22, Metal-depositing composition contains mixtures of metal compounds other than solely as Group IA metal compounds, e.g., electroless106/1.25, Metal-depositing composition contains polyvalent metal compound106/1.26, Group IB (Cu, Au) metal205/261, Depositing predominantly single metal coating205/296, Utilizing organic compound-containing bath205/297, Nitrogen-heterocyclic compound-containing205/298And organic sulfur compound-containing

Examiners

Primary: Gorgos, Kathryn
Assistant: Tran, Thai

Attorney, Agent or Firm

Foreign Patent References

  • 932 709 DE. 03/21/2013
  • 443108 SU. 12/21/1974

International Class

C25D 005/02

Abstract

The present invention provides plating solutions, particularly metal plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features, e.g., micron scale features and smaller, formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Additionally, the plating solutions may contain small amounts of additives which enhance the plated film quality and performance by serving as brighteners, levelers, surfactants, grain refiners, stress reducers, etc.

Other References

  • Lucio Colombo, "Wafer Back Surface Film Removal," Central R&D, SGS-Thompson, Microelectronics, Agrate, Italy, 6 pages (no date available)
  • Semitool.COPYRGT., Inc., "Metallization & Interconnect," 1998, 4 pages no month available
  • Verteq Online.COPYRGT., "Products Overview," 1996-1998, 5 pages no month available
  • Laurell Technologies Corporation, "Two control configurations available--see WS 400 OR WS-400Lite." Oct. 19, 1998, 6 pages
  • Peter Singer, "Tantalum, Copper and Damascene: The Future of Interconnects," Semiconductor International, Jun., 1998, pp. cover, 91-92, 94, 96 & 98
  • Peter Singer, "Wafer Processing," Semiconductor International, Jun., 1998, p. 70
  • European Search Report dated Aug. 26, 199
PatentsPlus Images
Enhanced PDF formats
loading...
PatentsPlus: add to cart
PatentsPlus: add to cartSearch-enhanced full patent PDF image
$9.95more info
 
Sign InRegister
Username  
Password   
forgot password?