Method of forming metal films on a substrate by chemical vapor deposition
August 29, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesProcess for making sintered glasses and ceramics Photomask with corrected white defects Method for making low-loss optical waveguides on an industrial scale Organometallic-derived cordierite and other compounds comprising oxides of silicon Plasma based method for production of superconductive oxide layers Process for preparing a metal sulfide thin film Process for preparing oxide superconducting films by radio-frequency generated aerosol-plasma deposition in atmosphere Deposition of magnesium fluoride films Method for delivering an involatile reagent in vapor form to a CVD reactor Source reagent compounds for MOCVD of refractory films containing group IIA elements Inventors
ApplicationNo. 484654 filed on 06/07/1995US Classes:427/250, Metal coating427/255.28, Coating formed from vaporous or gaseous phase reaction mixture (e.g., chemical vapor deposition, CVD, etc.)427/255.29, Inorganic oxygen, sulfur, selenium, or tellurium (i.e., chalcogen) containing coating (e.g., phosphosilicate, silicon oxynitride, etc.)427/255.31, Metal and chalcogen containing coating (e.g., metal oxide, metal sulfide, metal telluride, etc.)427/255.32, Plural metal containing coating (e.g., indium oxide/tin oxide, titanium oxide/aluminum oxide, etc.)505/445, Using an organometallic intermediate (e.g., ligand, chelate, clathrate, etc.)505/473Vapor depositionExaminersPrimary: King, Roy V.Attorney, Agent or FirmInternational ClassC23C 016/00AbstractA method of forming on a substrate a metal film, comprising depositing said metal film on said substrate via chemical vapor deposition from a metalorganic complex of the formula:MAY Xwherein:M is a y-valent metal;A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MAy with X;y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; andX is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F.The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of ଲ-diketonates, ଲ-thioketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. X may for example comprise a ligand such as tetraglyme, tetrahydrofuran, bipyridine, crown ether, or thioether.Other References
Field of SearchMetal coatingCOATING BY VAPOR, GAS, OR SMOKE Vapor deposition or utilizing vacuum Metallic compound coating Coating formed from vaporous or gaseous phase reaction mixture (e.g., chemical vapor deposition, CVD, etc.) Inorganic oxygen, sulfur, selenium, or tellurium (i.e., chalcogen) containing coating (e.g., phosphosilicate, silicon oxynitride, etc.) Metal and chalcogen containing coating (e.g., metal oxide, metal sulfide, metal telluride, etc.) Plural metal containing coating (e.g., indium oxide/tin oxide, titanium oxide/aluminum oxide, etc.) Reactant contains oxygen Vapor deposition Using an organometallic intermediate (e.g., ligand, chelate, clathrate, etc.) | |
