Method and apparatus for selective removal of material from wafer alignment marks
August 20, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesProcess for etching tin oxide Process for etching a semiconductor device using an improved protective etching mask Method for selective removal of a material from a wafer's alignment marks Submicron particle removal using liquid nitrogen Wafer alignment sensor Wafer pattern defect detection method and apparatus therefor Method for making interconnects and semiconductor structures using electrophoretic photoresist deposition Registration accuracy measurement mark for semiconductor devices Patent #: 5646452 Inventors
ApplicationNo. 916997 filed on 08/20/1997US Classes:438/745, Liquid phase etching257/E21.304, By chemical mechanical polishing (CMP) (EPO)257/E21.309, By liquid etching only (EPO)438/749, Sequential application of etchant438/750, To same side of substrate438/753SiliconExaminersPrimary: Utech, Benjamin L.Assistant: Vinh, Lan Attorney, Agent or FirmInternational ClassH01L 021/306AbstractA process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon. The process comprising the steps of aligning said area of said wafer, such as an alignment mark on the wafer, to an etchant dispensing apparatus, placing the surface of the wafer adjacent at least a portion of an annular portion of the etchant dispensing apparatus, dispensing at least one etchant onto said area of said wafer, such as an alignment mark, and removing the at least one etching from the wafer. The apparatus for the cleaning of an area of a semiconductor wafer using a material comprising a tube having a bore therethrough and exterior wall, the tube supplying material to said area of the wafer and an annular member having an interior wall surrounding the tube, the annular member having a thin edge thereon for positioning adjacent a portion of the area of the wafer during the cleaning thereof, the annular member forming an annular space between the exterior wall of the tube and the interior wall of the annular member.Field of SearchCHEMICAL ETCHINGCombined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.) Simultaneous (e.g., chemical-mechanical polishing, etc.) Utilizing particulate abradant Liquid phase etching Electrically conductive material (e.g., metal, conductive oxide, etc.) Semiconductor cleaning Semiconductor cleaning Including acidic agent Including use of vacuum, suction, or inert atmosphere Using solid work treating agents | |
