Dielectric materials of amorphous compositions of TI-O2 doped with rare earth elements and devices employing same
Patent 6093944 Issued on July 25, 2000. Estimated Expiration Date: 
June 4, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 4, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesVapor-deposition material for the production of high-refraction optical coatings Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes Mixed oxide high index optical coating material and method Dielectric ceramic composition and dielectric resonator using the same Patent #: 6025291 InventorApplicationNo. 090295 filed on 06/04/1998US Classes:257/310With high dielectric constant insulator (e.g., Ta 2 O 5 )ExaminersPrimary: Crane, Sara W.Attorney, Agent or FirmInternational ClassH01L 027/108AbstractA dielectric film useful for a capacitor in a DRAM device comprises an amorphous composition of Ti1-y My Ox, where y is approximately in the range 0.01 to 0.50, x is approximately 1.0 to 2.0, and M is a lanthanide rare earth element and advantageously, selected from the group of neodymium (Nd), terbium (Tb) and dysprosium (Dy). The concentration of dopants in the a-TiO2 film is preferably from 5 to 50 at. % and more preferably from 10 to 30 at. %. The inventive dielectric materials have a high dielectric constant of greater than 30 and figure of merit of greater than 9.0 μC/cm2.Other References
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