Method and apparatus for forming very small scale Cu interconnect metallurgy on semiconductor substrates
Method of electrochemical mechanical planarization
Apparatus for electrochemical mechanical planarization Patent #: 5911619
ApplicationNo. 365440 filed on 08/02/1999
US Classes:156/345.12, With mechanical polishing (i.e., CMP-chemical mechanical polishing)257/E21.304, By chemical mechanical polishing (CMP) (EPO)451/67, With nonabrading means451/73, Adjunct451/287, Planar surface abrading451/290Disk or wheel abrader
ExaminersPrimary: Utech, Benjamin L.
Assistant: Champagne, Donald L.
Attorney, Agent or Firm
International ClassC23F 001/02
AbstractA modified chemical-mechanical polishing apparatus is described. The apparatus includes: (i) a polishing pad 104 providing a surface against which a surface of an integrated circuit substrate 116 is polished; (ii) an anode 103 on which the polishing pad is secured, the anode including an electrolyzable conductive material; and (iii) a voltage source 106 electrically connecting the anode to the integrated circuit substrate in such a way that when a voltage is applied from the voltage source in the presence of slurry 114 admixed with an electrolyte composition on the polishing pad, an electrolytic cell results in which the conductive material deposits on the surface of the integrated circuit substrate. A process of depositing a conductive material on and polishing a surface of an integrated circuit substrate simultaneously is also described.