Patent References 3714609 3872326 3916365 Surface acoustic wave device Silicon on sapphire oriented for maximum mobility Surface acoustic wave transducer Semiconductor pressure transducer or other product employing layers of single crystal silicon Sealed cavity semiconductor pressure transducers and method of producing the same Thin flexible sintered structures Piezoelectric/electrostrictive actuator having at least one piezoelectric/electrostrictive film InventorsAssigneeApplicationNo. 057398 filed on 04/09/1998US Classes:29/25.35PIEZOELECTRIC DEVICE MAKINGExaminersPrimary: Cuda, IreneAttorney, Agent or FirmForeign Patent References
International ClassH01L 041/08Foreign Application Priority Data1995-12-28 JPAbstractA piezoelectric and/or electrostrictive film-type element comprises a zirconia substrate with a thin-walled diaphragm section provided integrally to cover and close a window to serve as a hollow space, and a film-shaped piezoelectric and/or electrostrictive operating section composed of a lower electrode, a piezoelectric and/or electrostrictive layer, and an upper electrode which are successively provided in a layered configuration on an outer surface of the diaphragm section in accordance with a film-forming method, wherein at least a part of a peripheral edge portion of the piezoelectric and/or electrostrictive layer extends laterally beyond a corresponding peripheral edge portion of the lower electrode to construct an overhang section located opposingly over the diaphragm section, and the overhang section is in a state of incomplete connection with respect to a partial region of the diaphragm section located just under by the aid of particles of an alumina-magnesia compound such as spinel particles allowed to intervene therebetween.Thus, it is possible to effectively improve, for example, the piezoelectric and/or electrostrictive characteristics such as the displacement amount, and the resonance frequency characteristics. | |