Gettering technique for silicon-on-insulator wafers
Patent 6083324 Issued on July 4, 2000. Estimated Expiration Date: 
February 19, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
February 19, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of making silicon material with enhanced surface mobility by hydrogen ion implantation Process for the production of thin semiconductor material films SOI (silicon on insulator) substrate with enhanced gettering effects Patent #: 5443661 InventorsAssigneeApplicationNo. 025964 filed on 02/19/1998US Classes:148/33.2, With recess, void, dislocation, grain boundaries or channel openings257/E21.122, Bonding of semiconductor wafer to insulating substrate or to semic onducting substrate using an intermediate insulating layer (EPO)257/E21.319, Using cavities formed by inert gas ion implantation, e.g., hydrogen, noble gas (EPO)257/E21.32, Of silicon on insulator (SOI) (EPO)257/E21.335, In Group IV semiconductor (EPO)257/E21.339, Of electrically inactive species in silicon to make buried insulating layer (EPO)257/E21.568, With separation/delamination along ion implanted layer, e.g., "Smart-cut", "Unibond" (EPO)438/473By implanting or irradiatingExaminersPrimary: Bowers, CharlesAssistant: Christianson, Keith Attorney, Agent or FirmInternational ClassH01L 021/322AbstractA gettering layer in a silicon-on-insulator wafer. The gettering layer may be formed by implanting gas-forming particles or precipitate-forming particles beneath the active region of the silicon layer and thermally treating the gas-forming ions to produce microbubbles or precipitates within the silicon layer. The microbubbles an/or precipitates create trapping sites for mobile impurity species, thus gettering the impurities. In another embodiment, a polysilicon layer is formed on a donor silicon wafer prior to separating a thin layer of silicon from the donor wafer. The thin layer of silicon is bonded to a backing wafer, the polysilicon layer provides a gettering layer between the active silicon and the backing wafer.Other References
Field of SearchGETTERING OF SUBSTRATEBy implanting or irradiating Ionized radiation (e.g., corpuscular or plasma treatment, etc.) Hydrogen plasma (i.e., hydrogenization) BONDING OF PLURAL SEMICONDUCTOR SUBSTRATES Subsequent separation into plural bodies (e.g., delaminating, dicing, etc.) Thinning of semiconductor substrate BARRIER LAYER STOCK MATERIAL, P-N TYPE With recess, void, dislocation, grain boundaries or channel openings With non-semiconductive coating thereon With contiguous layers of different semiconductive material Single crystal semiconductor layer on insulating substrate (SOI) With means (e.g., a buried channel stop layer) to prevent leakage current along the interface of the semiconductor layer and the insulating substrate Substrate is single crystal insulator (e.g., sapphire or spinel) | |
