Low power method of depositing a low k dielectric with organo silane
July 13, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias Spin-on glass for use in semiconductor processing Coatings on glass Composite solar/safety film and laminated window assembly made therefrom Process for forming highly conformal dielectric coatings in the manufacture of integrated circuits and product produced thereby Deposition of silicon dioxide films at temperatures as low as 100 degree C. by LPCVD using organodisilane sources Dielectric deposition Method of providing silicon dioxide layer on a substrate by means of chemical reaction from the vapor phase at a low pressure (LPCVD) Process for barrier coating of plastic objects Method of forming crystalline silicon carbide coatings InventorsApplicationNo. 114682 filed on 07/13/1998US Classes:257/642, At least one layer of organic material257/635, Multiple layers257/636, At least one layer of semi-insulating material257/640, At least one layer of silicon nitride257/E21.279, On silicon body (EPO)257/E21.576, Characterized by formation and post treatment of dielectrics, e.g., planarizing (EPO)257/E21.579For "dual damascene" type structures (EPO)ExaminersPrimary: Saadat, MahshidAssistant: Wilson, Neill R. Attorney, Agent or FirmForeign Patent References
International ClassH01L 023/58AbstractA method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas at a low RF power level from 20-200 W. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3 SiH3, and nitrous oxide, N2 O, at a pulsed RF power level from 50-200 W during 10-30% of the duty cycle.Other References
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