Thermal processor for semiconductor wafers
November 4, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3372672 3665139 Incandescent light source with transparent heat mirror Incandescent electric lamp with etalon type transparent heat mirror Photo-assisted CVD Chemical vapor deposition coating process employing radiant heat and a susceptor Induction heated reactor system for chemical vapor deposition Selective chemical vapor deposition apparatus Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus Semiconductor substrate heater and reactor process and apparatus Inventors
ApplicationNo. 743587 filed on 11/04/1996US Classes:118/725, Substrate heater118/724, By means to heat or cool219/385, Combined with container, enclosure, or support for material to be heated219/405, Including heat energy reflecting or directing means392/411, Lamp banks (i.e., array of plural lamps)392/416With chamberExaminersPrimary: Lund, Jeffrie R.Attorney, Agent or FirmForeign Patent References
International ClassesC23C 016/00F27D 001/00 AbstractA thermal processor for at least one semiconductor wafer includes a reactor chamber having a material substantially transparent to light including a wavelength within the range of about 200 nanometers to about 800 nanometers for holding the at least one semiconductor wafer. A coating including a material substantially reflective of infrared radiation can be present on at least a portion of the reactor chamber. A light source provides radiant energy to the at least one semiconductor wafer through the coating and the reactor chamber. The light source can include an ultraviolet discharge lamp, a halogen infrared incandescent lamp, or a metal halide visible discharge lamp. The coating can be situated on an inner or outer surface of the reactor chamber. If the reactor chamber has inner and outer walls, the coating can be situated on either the inner wall or the outer wall.Other References
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