Elemental semiconductor mirror
Patent 6065840 Issued on May 23, 2000. Estimated Expiration Date: 
May 17, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
May 17, 2019. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesInventorsAssigneeApplicationNo. 313152 filed on 05/17/1999US Classes:359/603, Anti-glare mirror359/584, Reflector359/586, Layers having specified index of refraction359/587, Plural layer groups lateral in parallel light paths359/588, Filter having four or more layers359/589, Selective wavelength transmission or reflection359/604AdjustableExaminersPrimary: Spyrou, CassandraAssistant: Sikder, Mohammad Attorney, Agent or FirmForeign Patent References
International ClassG02B 005/08AbstractAn elemental mirror having a high luminous reflectance of at least about 60% of incident light at the wavelength region of about 550 nanometers and being acromatic includes a substrate coated with a reflector comprising a multilayer thin film stack. The thin film stack comprises a first thin film layer of an elemental semiconductor which is closest to the first surface of the glass substrate and has a refractive index of greater than 3.0, a second thin film layer which is farthest from the first surface of the glass substrate, and a third thin film layer disposed between the first thin film layer and the second thin film layer, the third thin film layer having a refractive index between about 1.3 and 2.7, the second thin film layer having a refractive index greater than the third thin film layer. A light absorbing coating is included on at least one surface of the substrate and a layer of the reflector, the light absorbing coating absorbing light transmitted by the reflector coated substrate. Alternately, the multilayer thin film stack may be coated on the second surface of the glass substrate with the light absorbing coating disposed on the reflector coated second surface of the glass substrate. The elemental semiconductor may comprise silicon or germanium. The light absorbing coating may comprise one of a paint, a lacquer, a tape, a ceramic, a hot melt plastic, a resinous plastic, a plastisol, or an epoxy material.Other References
Field of SearchAnti-glare mirrorAdjustable Translucent or other semitransmitting panel selectively positioned in front of mirror Reflector Including metal or conductive layer Layers having specified index of refraction Plural layer groups lateral in parallel light paths Filter having four or more layers Selective wavelength transmission or reflection | |
