Simplified process for the fabrication of deep clear laser marks using a photoresist mask
Patent 6063695 Issued on May 16, 2000. Estimated Expiration Date: 
November 16, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
November 16, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of manufacturing semiconductor devices using laser beam cutting Method for dicing semiconductor substrates using a laser scribing and dual etch process Writing on silicon wafers Method of providing a mark for identification on a silicon surface Patent #: 5610104 InventorsApplicationNo. 192451 filed on 11/16/1998US Classes:438/462, Having specified scribe region structure (e.g., alignment mark, plural grooves, etc.)216/65, Using laser216/94, Etching using radiation (e.g., laser, electron-beam, ion-beam, etc.)216/99, Substrate contains silicon or silicon compound257/E21.238, Making grooves, e.g., cutting (EPO)257/E23.179, Marks applied to semiconductor devices or parts, e.g., registration marks, test patterns, alignment structures, wafer maps (EPO)438/460, SEMICONDUCTOR SUBSTRATE DICING438/463, By electromagnetic irradiation (e.g., electron, laser, etc.)438/940LASER ABLATIVE MATERIAL REMOVALExaminersPrimary: Niebling, John F.Assistant: Zarneke, David A. Attorney, Agent or FirmInternational ClassH01L 021/301AbstractA process for the formation of deep clear laser marks on silicon wafers is described. Tall ridges of material which is erupted from the wafer surface during the deep laser penetration form adjacent to the marks. These ridges are of the order of 3 to 15 microns in height and must be removed prior to subsequent wafer processing to avoid fragmentation causing scratches and particulate contamination. The process of the invention deposits a non-conformal layer of photoresist or other flowable material on the wafer. The peaks of the ridges protrude above the surface of the conformal layer be a significant amount and are then etched away using an aqueous silicon etch. The non-conformal layer protects the wafer surface from the silicon etch so that only the ridges are removed. After the ridges are etched, the non-conformal layer is removed leaving residual ridges of a height less than or equal to the thickness of the conformal layer.Field of SearchSEMICONDUCTOR SUBSTRATE DICINGHaving specified scribe region structure (e.g., alignment mark, plural grooves, etc.) By electromagnetic irradiation (e.g., electron, laser, etc.) LASER ABLATIVE MATERIAL REMOVAL Using laser Etching using radiation (e.g., laser, electron-beam, ion-beam, etc.) Substrate contains silicon or silicon compound | |
