Fabrication of silicides by excimer laser annealing of amorphous silicon
February 11, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer Method for forming polycrystalline thin film and method for fabricating thin-film transistor Prevention of abnormal WSix oxidation by in-situ amorphous silicon deposition Process for fabricating a thin film transistor semiconductor device Semiconductor, semiconductor device, and method for fabricating the same Method of manufacturing a semiconductor device Method for producing semiconductor device Patent #: 5923968 InventorsApplicationNo. 022070 filed on 02/11/1998US Classes:438/682, Silicide257/E21.165, Conductive layer comprising silicide (EPO)257/E21.199, Conductor comprising silicide layer formed by silicidation reaction of silicon with metal layer (EPO)257/E21.435, Lateral single gate single channel silicon transistor with both lightly doped source and drain extensions and source and drain self-aligned to sides of gate, e.g., LDD MOSFET, DDD MOSFET (EPO)438/166, Including recrystallization step438/308, Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)438/581, Silicide438/649, Silicide438/662Utilizing laserExaminersPrimary: Whitehead, Carl Jr.Assistant: Duong, Khanh Attorney, Agent or FirmInternational ClassH01L 021/44AbstractStable suicides are formed utilizing excimer laser crystallization in place of a conventional second high temperature rapid thermal processing annealing step. Specifically, thermally unstable silicide having a metal-rich surface layer is conventionally formed utilizing deposition of refractory metal followed by low temperature annealing. After removal of unreacted refractory metal, an amorphous silicon film is deposited on top of the unstable silicide and exposed to radiation from an excimer laser, such that the amorphous silicon melts, reacts with refractory metal from the underlying unstable silicide, and reforms as thermally stable silicide evidencing low electrical resistance.Other References
Field of SearchIncluding recrystallization stepRadiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.) Silicide Of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof) Silicide Silicide Possessing plural conductive layers (e.g., polycide) Silicide Silicide Forming silicide | |
