Vapor deposition apparatus and method for forming thin film

Patent 6059885 Issued on May 9, 2000. Estimated Expiration Date:

December 16, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

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Inventors

Assignee

Application

No. 991407 filed on 12/16/1997

US Classes:

118/730, Rotary118/715GAS OR VAPOR DEPOSITION

Examiners

Primary: Lund, Jeffrie R.

Attorney, Agent or Firm

Foley & Lardner

Foreign Patent References

0 502 209 EP. 04/13/1992
59-72718 JP. 04/13/1984
60-39832 JP 03/13/1985
60-189928 JP. 09/13/1985
61-5515 JP 01/13/1986
61-180424 JP 08/13/1986
62-60875 JP 03/13/1987
1-286306 JP 11/13/1989
4-187594 JP. 07/13/1992
5-74719 JP. 03/13/1993
5-90167 JP. 04/13/1993
6-216045 JP. 08/13/1994
7-50260 JP. 02/13/1995

International Class

C23C 016/00

Foreign Application Priority Data

1996-12-19 JP

Abstract

A vapor deposition apparatus includes a cylindrical hollow reactor having gas supply ports at its upper portion and an exhaust port at its bottom portion. A rotational substrate holder, which seats a wafer substrate, is concentrically placed inside the reactor. The reactor has a straightening vane having gas holes concentrically positioned at its upper portion. Reaction gas is supplied into the reactor to form a thin film on the surface of the wafer substrate on the rotational substrate holder by vapor deposition. In one embodiment, the straightening vane is configured so that the flow rate of the reaction gas in the center portion covering the area of the wafer substrate and the gas flow rate of the reaction gas in the outer portion of the center portion are different from each other. In another embodiment, the reactor is sectioned into upper and lower portions. The inner diameter of the upper portion is smaller than the inner diameter of the lower portion. A link portion connects the lower end of the upper portion and the upper end of the lower portion. The link portion is provided with straightening gas flow-out holes. The rotational substrate holder is positioned below the lower end of the upper portion of the reactor by a predetermined height difference.

Other References

P. N. Gadgil, "Optimization of a Stagnation Point Flow Reactor Design for Metalorganic Chemical Vapor Deposition by Flow Visualization", Journal of Crystal Growth, vol. 134, Dec. 1993, pp. 302-31