Apparatus and method for determining the temperature of objects in thermal processing chambers
March 12, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3537314 3630085 Method of and an apparatus for measuring surface temperature and emmissivity of a heated material Optical reflectance method for determining the surface roughness of materials in semiconductor processing Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. Emissivity correction apparatus and method Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors Apparatus and method for compensating for errors in temperature measurement of semiconductor wafers during rapid thermal processing Apparatus and method for compensating for errors in temperature measurement of semiconductor wafers during rapid thermal processing Method and apparatus for active pyrometry InventorAssigneeApplicationNo. 041536 filed on 03/12/1998US Classes:374/126, Having emissivity compensating or specified radiating surface219/411, With infrared generating means219/497, Comprising voltage and/or current measuring and comparing or combining means374/9, EMISSIVITY DETERMINATION374/128Having significant signal handling circuitry (e.g., linearizing, emissivity compensation)ExaminersPrimary: Bennett, G. BradleyAssistant: Verbitsky, Gail Attorney, Agent or FirmForeign Patent References
International ClassesG01J 005/00G01J 005/10 G01N 025/00 H05B 001/00 AbstractThe present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semiconductive wafer, by sensing and measuring the object radiation being emitted at a particular wavelength. In particular, a reflective device is placed adjacent to the radiating object, which causes thermal radiation being emitted by the wafer to be reflected multiple times. The reflected thermal radiation is then monitored using a light detector. Additionally, a reflectometer is contained within the system which independently measures the reflectivity of the object. The temperature of the object is then calculated using not only the thermal radiation information but also the information received from the reflectometer.Other References
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