Furnace for rapid thermal processing with optical switching film disposed between heater and reflector
Patent 6047107 Issued on April 4, 2000. Estimated Expiration Date: 
December 19, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
December 19, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesEmissivity independent temperature measurement systems Rapid thermal processing apparatus and method Hydrogen-activated thin film switching device Bistable switching device containing gadolinium hydride Patent #: 5652433 InventorsApplicationNo. 994153 filed on 12/19/1997US Classes:392/416, With chamber118/724, By means to heat or cool219/390, Muffle-type enclosure359/273Particular electrochromic layer structureExaminersPrimary: Jeffery, John A.Attorney, Agent or FirmForeign Patent References
International ClassesG02F 003/02H03K 017/78 Foreign Application Priority Data1996-12-20 EPAbstractA furnace (1) for Rapid Thermal Processing of a wafer (7), characterized in that the wafer (7) is heated by lamps (9), and the heat radiation is reflected by an optical switching device (15,17) which is in the reflecting state during the heating stage. During the cooling stage of the wafer (7), the heat is absorbed by the switching device (15,17), which is in the heat-absorbing state. The switching device comprises a switching film of a trivalent metal, such as gadolinium, which is capable of forming hydrides by an exchange of hydrogen. Dependent on the hydrogen concentration of the hydrides, the film reflects or absorbs heat. The hydrogen content in the switching film can be changed by varying the partial pressure of hydrogen, or, preferably, by varying the potential of the switching film forming part of a stack of layers in an electrochemical cell.Field of SearchWith chamberWith support for workpiece With reflector Elongated reflector Including heat energy reflecting or directing means With infrared generating means Muffle-type enclosure Electrochromic Reflection-type (e.g., display device) Particular electrolyte layer Particular electrochromic layer structure Diverse layer By means to heat or cool Substrate heater With means to apply electrical and/or radiant energy to work and/or coating material | |
