Patent ReferencesExhaust system for chemical vapor deposition apparatus Method and apparatus for monitoring etching Stack gas emissions control system Method and system for vapor extraction from gases Fine particle collector trap for vacuum evacuating system Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process Exhaust gas cleaner Exhaust particulate filter Baffle/settling chamber for a chemical vapor deposition equipment Method of rapid sample handling for laser processing InventorsApplicationNo. 741241 filed on 10/30/1996US Classes:118/715, GAS OR VAPOR DEPOSITION55/284With sequential cleaning of plural unitsExaminersPrimary: Dang, ThiAttorney, Agent or FirmForeign Patent References
International ClassB01D 053/00AbstractAn apparatus for minimizing deposition in an exhaust line of a substrate processing chamber. The apparatus includes first and second members having opposing surfaces that define a fluid conduit between them. The fluid conduit includes an inlet, an outlet and a collection chamber between the inlet and the outlet. The apparatus is connected at its inlet to receive the exhaust of the substrate processing chamber, and the collection chamber is structured and arranged to collect particulate matter flowing through the fluid conduit and to inhibit egress of the particulate matter from the collection chamber. A microwave plasma generation system supplies microwave energy within the fluid conduit to form a plasma from etchant gases within the fluid conduit. Constituents from the plasma react with the particulate matter collected in the collection chamber to form gaseous products that may be pumped out of the fluid conduit. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.Other References
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