U.S. patents available from 1976 to present.
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Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment

Patent 6045618 Issued on April 4, 2000. Estimated Expiration Date: Icon_subject October 30, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Exhaust system for chemical vapor deposition apparatus
Patent #: 4608063
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Inventor: Kurokawa

Method and apparatus for monitoring etching
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Stack gas emissions control system
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Inventor: Kanter ,   et al.

Method and system for vapor extraction from gases
Patent #: 4735633
Issued on: 04/05/1988
Inventor: Chiu

Fine particle collector trap for vacuum evacuating system
Patent #: 4816046
Issued on: 03/28/1989
Inventor: Maeba ,   et al.

Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
Patent #: 5000113
Issued on: 03/19/1991
Inventor: Wang, et al.

Exhaust gas cleaner
Patent #: 5141714
Issued on: 08/25/1992
Inventor: Obuchi, et al.

Exhaust particulate filter
Patent #: 5171337
Issued on: 12/15/1992
Inventor: Pollock

Baffle/settling chamber for a chemical vapor deposition equipment
Patent #: 5211729
Issued on: 05/18/1993
Inventor: Sherman

Method of rapid sample handling for laser processing
Patent #: 5323013
Issued on: 06/21/1994
Inventor: Kelly, et al.

More ...

Inventors

Application

No. 741241 filed on 10/30/1996

US Classes:

118/715, GAS OR VAPOR DEPOSITION55/284With sequential cleaning of plural units

Examiners

Primary: Dang, Thi

Attorney, Agent or Firm

Foreign Patent References

  • 1282732A CA 09/22/1991
  • 0158823 A2 EP 10/22/1985
  • 0176295 EP 04/22/1986
  • 0289858 EP 11/22/1988
  • 0 296 720 A2 EP 12/22/1988
  • 0767254 EP 04/22/1997
  • 4 319 118 A1 DE 06/22/1993
  • 4319118 DE 12/22/1994
  • 51-129868 JP. 11/22/1976
  • 52-78176 JP. 07/22/1977
  • 58-101722 JP 06/22/1983
  • 59-181619 JP 10/22/1984
  • 63-28869 JP 02/22/1988
  • 1-288 355 JP 11/22/1989
  • 2-125876 JP 05/22/1990
  • 4-136175 JP 05/22/1992
  • 5-202474 JP 08/22/1993
  • 9-010 544 JP 01/22/1997
  • WO 80/01363 WO 07/22/1980

International Class

B01D 053/00

Abstract

An apparatus for minimizing deposition in an exhaust line of a substrate processing chamber. The apparatus includes first and second members having opposing surfaces that define a fluid conduit between them. The fluid conduit includes an inlet, an outlet and a collection chamber between the inlet and the outlet. The apparatus is connected at its inlet to receive the exhaust of the substrate processing chamber, and the collection chamber is structured and arranged to collect particulate matter flowing through the fluid conduit and to inhibit egress of the particulate matter from the collection chamber. A microwave plasma generation system supplies microwave energy within the fluid conduit to form a plasma from etchant gases within the fluid conduit. Constituents from the plasma react with the particulate matter collected in the collection chamber to form gaseous products that may be pumped out of the fluid conduit. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.

Other References

  • Lieberman et al., "Principles of Plasma Discharges and Materials Processing", Library of Congress Cataloging in Publication Data, pp. 404-410, (1994)
  • W.H. Hayward, "Introduction to Radio Frequency Design", Library of Congress Cataloging in Publication Data, pp. 135-137, (1982)
  • Danielson et al., "Use DryScrub to Improve Hot Wall Nitride Equipment Reliability", Product Application Report, pp. 1-6
  • Singer et al., "Pre-pump Scrubbers Simplify Maintenance and Improve Safety", Semiconductor International, pp. 1-3
  • Mohindra et al., "Abatement of Perfluorocompounds (PFCs) in Microwave Tubular Reactor Using O2 As An Additive Gas", Department of Chemical Engineering, MIT, pp. 1-59
  • Mocella et al., "Options for Environmentally Impacted Perfluorinated Gases Used in Plasma Processing", 10th Symposium Plasma Etching, pp. 192-200 (1994)
  • Mocella et al., "Etch Process Characterization Using Neural Network Methodology: A Case Study", SPIE Process Module Metrology, Control, and Clustering, vol. 1594, pp. 232-242 (1991
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