Production of bulk single crystals of silicon carbide
Patent 6045613 Issued on April 4, 2000. Estimated Expiration Date: 
October 9, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
October 9, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References Re34861 Silicon carbide gemstones Growth of bulk single crystals of aluminum nitride Method of producing silicon carbide single crystal Method and apparatus for growing high purity single crystal silicon carbide Patent #: 5985024 InventorApplicationNo. 169399 filed on 10/09/1998US Classes:117/84, FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION)117/99, With a chemical reaction (except ionization) in a disparate zone to form a precursor (e.g., transport processes)117/935, Silicon from vapor or gaseous state {C30B 29/06}117/951Carbide containing (e.g., SiC) {C30B 29/36}ExaminersPrimary: Utech, Benjamin L.Assistant: Champagne, Donald L. Attorney, Agent or FirmInternational ClassC30B 029/36AbstractBulk, low impurity silicon carbide single crystals are grown by deposition of vapor species containing silicon and vapor species containing carbon on a crystal growth interface. The silicon source vapor is provided by vaporizing liquid silicon and transporting the silicon vapor to a crystal growth crucible. The carbon vapor species are provided by either a carbon containing source gas (for example, CN) or by flowing the silicon source vapor over or through a solid carbon source, for example flowing the silicon vapor through porous graphite or a bed of graphite particles.Field of SearchFORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION)With a chemical reaction (except ionization) in a disparate zone to form a precursor (e.g., transport processes) Using an organic precursor (e.g., propane, metal-organic, MOCVD, MOVPE) Silicon from vapor or gaseous state {C30B 29/06} Carbide containing (e.g., SiC) {C30B 29/36} SILICON CARBIDE SEMICONDUCTOR | |
