Temperature calibration wafer for rapid thermal processing using thin-film thermocouples
January 27, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesThermopile type detector with temperature sensor for cold junction Integrated voltage-isolation power supply Multiple thermocouple sensor Thermal comfort sensing device Ultrathin film thermocouples and method of manufacture Temperature sensor calibration wafer structure and method of fabrication Thin film high temperature silicide thermocouples Patent #: 5474619 InventorAssigneeApplicationNo. 016668 filed on 01/27/1998US Classes:257/467, Temperature257/469With means to reduce temperature sensitivity (e.g., reduction of temperature sensitivity of junction breakdown voltage by using a compensating element)ExaminersPrimary: Jackson, JeromeAttorney, Agent or FirmInternational ClassH01L 031/00AbstractA thin-film thermocouple is provided which can be used at temperature of up to 900° C. The thin-film thermocouple includes: a silicon substrate; an SiO2 diffusion barrier layer formed on the substrate; a titanium oxide adhesion layer formed on the diffusion barrier layer; a palladium thin film formed on the diffusion barrier layer; and a platinum thin film formed on the diffusion barrier layer and overlapping a portion of the palladium thin film to form a thermocouple junction.Other References
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