U.S. patents available from 1976 to present.
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High temperature resonant integrated microstructure sensor

Patent 6031944 Issued on February 29, 2000. Estimated Expiration Date: Icon_subject December 30, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Dielectrically isolated resonant microsensors
Patent #: 5417115
Issued on: 05/23/1995
Inventor: Burns

Static pressure compensation of resonant integrated microbeam sensors
Patent #: 5458000
Issued on: 10/17/1995
Inventor: Burns, et al.

Cantilevered microbeam temperature sensor
Patent #: 5511427
Issued on: 04/30/1996
Inventor: Burns

Integrated resonant microbeam sensor and transistor oscillator
Patent #: 5550516
Issued on: 08/27/1996
Inventor: Burns, et al.

Opto-electro-mechanical device or filter, process for making, and sensors made therefrom Patent #: 5559358
Issued on: 09/24/1996
Inventor: Burns, et al.

Inventor

Assignee

Application

No. 999165 filed on 12/30/1997

US Classes:

385/12, OPTICAL WAVEGUIDE SENSOR385/30, Evanescent wave coupling385/32Coupling light through a waveguide bend or loop

Examiners

Primary: Palmer, Phan T. H.

Attorney, Agent or Firm

International Class

G02B 006/00

Abstract

A very high temperature microbeam sensor of a resonant integrated microstructure having an electrostatic beam driver and an optical fiber pick-up for sensed light from the beam. The high temperature sensor has no components that are vulnerable to temperatures up to 600 degrees C. Associated components for detection, processing and driving are remote from the sensor environment. By using different materials in the beam assembly, such as tungsten for the beam, and sapphire for the substrate and the shell, the sensor can withstand temperatures up to 1000 degrees C. Also, optical fiber may be used for long distance connections between processing electronics and the driver in the sensing device, by locating a photo detector just outside the very or ultra high temperature sensing environment, and then using optical fiber for sending long distance signals from the processor to the driver photo detector, for eliminating electrical signal-to-noise problems.

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