Apparatus for determining the temperature of a semi-transparent radiating body
July 24, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesEmissivity correction apparatus and method Bichannel radiation detection method Non-contact techniques for measuring temperature or radiation-heated objects Bichannel radiation detection apparatus Pyrometer apparatus and method Emissivity independent temperature measurement systems Indirect temperature-measurement of films formed on semiconductor wafers Multi-point pyrometry with real-time surface emissivity compensation Method and device for measuring temperature radiation using a pyrometer wherein compensation lamps are used Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies InventorsAssigneeApplicationNo. 899865 filed on 07/24/1997US Classes:374/130, Optical system structure (e.g., lens)219/405, Including heat energy reflecting or directing means250/492.22, Pattern control374/126, Having emissivity compensating or specified radiating surface374/131, With radiation conducting element392/416With chamberExaminersPrimary: Gutierrez, DiegoAssistant: Pruchnic, Stanley J. Jr. Attorney, Agent or FirmForeign Patent References
International ClassesG01J 005/08G01N 025/00 H05B 001/02 A21B 002/00 AbstractThe present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semi-conductive wafer, by sampling from the object radiation being emitted at a particular wavelength. In one embodiment, a single reflective device is placed adjacent to the radiating object. The reflective device includes areas of high reflectivity and areas of low reflectivity. The radiation being emitted by the object is sampled within both locations generating two different sets of radiation measurements. The measurements are then analyzed and a correction factor is computed based on the optical characteristics of the reflective device and the optical characteristics of the wafer. The correction factor is then used to more accurately determine the temperature of the wafer. In an alternative embodiment, if the radiating body is semi-transparent, a reflective device is placed on each side of the object, which compensates for the transparency of the object.Other References
Field of SearchOptical system structure (e.g., lens)With radiation conducting element Having emissivity compensating or specified radiating surface WITH INDICATING, TESTING, INSPECTING, OR MEASURING MEANS With means for visual observation Substrate heater With means to apply electrical and/or radiant energy to work and/or coating material By means to heat or cool Measuring, analyzing or testing Measuring, analyzing or testing Including heat energy reflecting or directing means With infrared generating means Muffle-type enclosure Lamp banks (i.e., array of plural lamps) With chamber With reflector Pattern control | |
