Colorless silicon carbide crystals
December 4, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References Re34861 Process for fabricating SiC semiconductor devices Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide Process for producing a SiC semiconductor device Method for producing a silicon carbide semiconductor device Large area semiconductor wafers Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal Silicon carbide gemstones Patent #: 5723391 InventorsApplicationNo. 984938 filed on 12/04/1997US Classes:501/86, Synthetic precious stones (e.g., single crystals, etc.)117/951, Carbide containing (e.g., SiC) {C30B 29/36}252/62.3C, Binary alloy or carbide; e.g., Al, In, LiC501/88Silicon carbideExaminersPrimary: Group, KarlAttorney, Agent or FirmInternational ClassesC04B 035/565C30B 029/36 AbstractLarge single crystals of silicon carbide are grown in a furnace sublimation system. The crystals are grown with compensating levels of p-type and n-type dopants (i.e., roughly equal levels of the two dopants) in order to produce a crystal that is essentially colorless. The crystal may be cut and fashioned into synthetic gemstones having extraordinary toughness and hardness, and a brilliance meeting or exceeding that of diamond.Other References
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