Zirconium and/or hafnium oxynitride gate dielectric
Patent 6013553 Issued on January 11, 2000. Estimated Expiration Date: 
July 15, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
July 15, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3895966 Method for producing ceramic composite materials containing silicon oxynitride and zirconium oxide Voltage variable capacitor Dielectric device Conductive exotic-nitride barrier layer for high-dielectric-constant materials Semiconductor device Device and manufacturing method for a ferroelectric memory Method of making a variable concentration SiON gate insulating film Method of making deep sub-micron meter MOSFET with a high permitivity gate dielectric Conductive exotic-nitride barrier layer for high-dielectric-constant material electrodes InventorsAssigneeApplicationNo. 115773 filed on 07/15/1998US Classes:438/287, Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound257/213, FIELD EFFECT DEVICE257/288, Having insulated electrode (e.g., MOSFET, MOS diode)257/310, With high dielectric constant insulator (e.g., Ta 2 O 5 )257/410, Gate insulator includes material (including air or vacuum) other than SiO 2257/411, Composite or layered gate insulator (e.g., mixture such as silicon oxynitride)257/E21.193, On single crystalline silicon (EPO)257/E29.162, Insulating materials for IGFET (EPO)438/761, Multiple layers438/763, Layers formed of diverse composition or by diverse coating processes438/765, By reaction with substrate438/769, Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.)438/775, Nitridation438/785, Insulative material is compound of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)438/786Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.)ExaminersPrimary: Thomas, TomAssistant: Souw, Bernard E. Attorney, Agent or FirmInternational ClassesH01L 021/283H01L 021/31 H01L 021/441 H01L 021/469 AbstractA field effect semiconductor device comprising a high permittivity zirconium (or hafnium) oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide.Other References
Field of SearchGate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compoundHaving high dielectric constant insulator (e.g., Ta2O5, etc.) Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound Gate insulator structure constructed of plural layers or nonsilicon containing compound Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.) Nitridation Insulative material is compound of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof) Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.) With high dielectric constant insulator (e.g., Ta 2 O 5 ) Gate insulator includes material (including air or vacuum) other than SiO 2 Composite or layered gate insulator (e.g., mixture such as silicon oxynitride) | |
