U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Method of depositing films on semiconductor devices by using carboxylate complexes

Patent 6010969 Issued on January 4, 2000. Estimated Expiration Date: Icon_subject October 2, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Method for delivering an involatile reagent in vapor form to a CVD reactor
Patent #: 5204314
Issued on: 04/20/1993
Inventor: Kirlin, et al.

Source reagent compounds for MOCVD of refractory films containing group IIA elements
Patent #: 5225561
Issued on: 07/06/1993
Inventor: Kirlin, et al.

Bimetallic alkoxide reagents and method of making the same
Patent #: 5326892
Issued on: 07/05/1994
Inventor: Vaartstra

Precious metal composition
Patent #: 5401535
Issued on: 03/28/1995
Inventor: Bishop

Metal complex source reagents for MOCVD
Patent #: 5453494
Issued on: 09/26/1995
Inventor: Kirlin, et al.

Apparatus for flash vaporization delivery of reagents
Patent #: 5536323
Issued on: 07/16/1996
Inventor: Kirlin, et al.

Chemical vapor deposition of metal oxide films through ester elimination reactions
Patent #: 5656329
Issued on: 08/12/1997
Inventor: Hampden-Smith, et al.

Chemical vapor deposition of tantalum- or niobium-containing coatings
Patent #: 5677002
Issued on: 10/14/1997
Inventor: Kirlin, et al.

Tantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the same
Patent #: 5679815
Issued on: 10/21/1997
Inventor: Kirlin, et al.

Metal carboxylate complexes for formation of metal-containing films on semiconductor devices
Patent #: 5695815
Issued on: 12/09/1997
Inventor: Vaartstra

More ...

Inventor

Application

No. 720711 filed on 10/02/1996

US Classes:

438/758, COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE257/E21.272, With perovskite structure (EPO)427/96.8, Vapor or gas deposition427/97.3, Nonuniform or patterned coating427/226, HEAT DECOMPOSITION OF APPLIED COATING OR BASE MATERIAL438/3, HAVING MAGNETIC OR FERROELECTRIC COMPONENT438/240, Having high dielectric constant insulator (e.g., Ta2O5, etc.)438/754Electrically conductive material (e.g., metal, conductive oxide, etc.)

Examiners

Primary: Bowers, Charles
Assistant: Nguyen, Thinh

Attorney, Agent or Firm

Foreign Patent References

  • 0 405 634 A2 EP 01/13/1991
  • WO 96/40690 WO. 12/13/1996

International Class

B05D 003/08

Abstract

A method of forming a film on a substrate using chemical vapor deposition techniques and carboxylate complexes. The complexes and method are particularly suitable for the preparation of semiconductor structures.

Other References

  • J.M. Klerks et al., "I. Compounds of Aluminum: Cordination of Diazabutadienes to AL(CH3)3 and Subsequent Intramolecular Insertion and Rearrangement Reactions Leading to (CH3 )2 ALR--N--CH(CH3)--C(R')=N--R (R'=H, CH3) and (CH3)2 ALR--N--CH2 --C(CH3)=N--R", J. Organometallic Chem., 181 271-283 (1979), no month
  • S.J. Troyanov et al., "Crystal and Molecular Structure of Bismuth(III) 2,2-Dimethylpropanoate", J. Chem. Soc. Chem. Commun., 335-336 (1993), no month
  • G. Van Koten et al., "Metal-1,4-diaza-1,3-butadiene Chemistry", Adv. Organomet. Chem., 21, 222-225, 238-239 (1982), no month
  • Versteeg et al., "Metalorganic Chemical Vapor Deposition by Pulsed Liquid Injection Using an Ultrasonic Nozzle: Titanium Dioxide on Sapphire from Titanium(IV) Isopropoxide", J. Amer. Cer. Soc., 78, 2763-2768 (1995), no mont
PatentsPlus Images
Enhanced PDF formats
loading...
PatentsPlus: add to cart
PatentsPlus: add to cartSearch-enhanced full patent PDF image
$9.95more info
PatentsPlus: add to cart
PatentsPlus: add to cartIntelligent turbocharged patent PDFs with marked up images
$16.95more info
 
Sign InRegister
Username  
Password   
forgot password?