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US Patent 6005793 - Multiple-bit random-access memory array

US Patent Issued on December 21, 1999
Estimated Patent Expiration Date: Icon_subject March 31, 2018Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
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Abstract

A cache memory consists of plurality of memory bits within a random-access memory (RAM) cell. An extra address decode circuit is needed to select a single memory bit within the multi-bit RAM cell before normal access of RAM array circuit. Combining of multiple bits into a RAM cell reduces the number of interconnections in comparison to single bit RAM cell. This technique eliminates the need to break up the cache array into multiple sets for reducing power dissipation. The area advantages are also from optimal layout of multi-bit RAM cell, address decoder, and sense amplifier unit. Furthermore, the interconnections can be widened to reduce the RC delay as it is a dominating factor in future technology advancement. The multiplexing of the bits are done before the row decoding thus reducing one level of multiplexing after reading of data from the sense amplifier units.

Other References

  • Ashish Karandikar and Keshab K. Parhj, "Low Power SRAM Design Using Hierarchical Divided Bit-Line Approach", ICCD '98, pp. 82-82, Oct. 199

Inventor

Application

No. 052518 filed on 03/31/1998

US Classes:

365/154, Flip-flop (electrical)365/185.01FLOATING GATE

Field of Search

365/185.01, FLOATING GATE365/203, Precharge365/210, Reference or dummy element365/233, Sync/clocking365/244, MISCELLANEOUS365/154Flip-flop (electrical)

Examiners

Primary: Nelms, David C.
Assistant: Phung, Anh

US Patent References

4804871, Bit-line isolated, CMOS sense amplifier
Issued on: 02/14/1989
Inventor: Walters, Jr.
5619464High performance RAM array circuit employing self-time clock generator for enabling array accessess
Issued on: 04/08/1997
Inventor: Tran

International Classes

G11C 011/00
G11C 016/04

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