Fabrication of phase-shifting lithographic masks
Process for fabricating phase shift mask and process of semiconductor integrated circuit device
Method of making masks for phase shifting lithography to avoid phase conflicts
Method for designing phase-shifting masks with automatization capability
Method and apparatus for designing photomasks
Apparatus for designing photomasks
Method and a system for designing a photomask for use in manufacture of a semiconductor device Patent #: 5795683
ApplicationNo. 046794 filed on 03/24/1998
US Classes:430/5, Radiation mask716/19, DESIGN OF SEMICONDUCTOR MASK716/21Pattern exposure
ExaminersPrimary: Teska, Kevin J.
Assistant: Thompson, A. M.
Attorney, Agent or Firm
Foreign Patent References
International ClassesG03F 009/00
Foreign Application Priority Data1997-03-25 JP
AbstractIn a Levenson photomask design method of partially forming a plurality of opening patterns for passing incident light in a light-shielding film for shielding the incident light, and arranging, on some patterns, phase shifters, line segment pairs of different patterns which are adjacent to each other within a predetermined distance R are extracted in units of line segments obtained by dividing the patterns. A pattern within a predetermined distance S from the central point of the opposite region of a line segment pair of interest in a direction perpendicular to the line segments is obtained. The obtained pattern is subjected to a process simulation to obtain resolution easiness representing the easiness in resolving the adjacent patterns. On the basis of the resolution easiness obtained for the adjacent pattern pair within the distance R, a phase shifter is arranged in ascending order of resolution easiness to give a phase difference. Resolution suitable for the exposure condition used can be obtained by a simple method. When the shifter arrangement is determined in consideration of the resolution easiness, a high-resolution shifter arrangement can be realized for a Levenson phase shift mask.
Field of SearchRadiation mask