Apparatus and method of removing unnecessary matter and coating process using such method
Patent 6004631 Issued on December 21, 1999. Estimated Expiration Date: 
February 7, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
February 7, 2016. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3762941 Method for conditioning drilled holes in multilayer wiring boards Ion source and ion etching process Cleaning device for a plasma etching system Removal of coating from periphery of a semiconductor wafer Oxidation of material in high pressure oxygen plasma Etching method Hydrogen iodide etch of tin oxide Gaseous process and apparatus for removing films from substrates Apparatus and method for photoetching of polyimides, polycarbonates and polyetherimides InventorAssigneeApplicationNo. 598083 filed on 02/07/1996US Classes:427/534, Cleaning or removing part of substrate (e.g., etching with plasma, glow discharge, etc.)134/1.2, Semiconductor cleaning216/23, FORMING OR TREATING ARTICLE CONTAINING A LIQUID CRYSTAL MATERIAL216/67, Using plasma216/71, Specific configuration of electrodes to generate the plasma257/E21.252, By dry-etching (EPO)257/E21.256, By dry-etching (EPO)427/240, CENTRIFUGAL FORCE UTILIZED427/535, Plasma (e.g., cold plasma, corona, glow discharge, etc.)427/536, Organic substrate438/694, Combined with coating step438/710, By creating electric field (e.g., plasma, glow discharge, etc.)438/723, Silicon oxide or glass438/725, Organic material (e.g., resist, etc.)438/729, Using specified electrode/susceptor configuration (e.g., of multiple substrates using barrel-type susceptor, planar reactor configuration, etc.) to generate plasma438/730, Producing energized gas remotely located from substrate438/735, Differential etching of semiconductor substrate438/743, Silicon oxide or glass438/782With substrate handling during coating (e.g., immersion, spinning, etc.)ExaminersPrimary: Padgett, MarianneAttorney, Agent or FirmForeign Patent References
International ClassesB04D 003/00H01L 021/465 H01L 021/475.7 Foreign Application Priority Data1995-02-07 JPAbstractAn apparatus for removing unnecessary matter formed on an edge portion of a substrate without damaging a middle area of a top face of the substrate is provided. The substrate is supported on a stage which is in contact only with a bottom face of the substrate. An activated gas supply device is located opposed to the stage and includes a ring-shaped electrode and a cover electrode surrounding the ring-shaped electrode. The cover electrode includes a gas outlet formed therethrough. Activated species and excited molecules formed from an atmospheric plasma are blown against the edge portion of the substrate through the gas outlet. The activated species and excited molecules and unnecessary matter removed form the edge portion of the substrate through reaction with the activated species and excited molecules, is exhausted along a side face of the edge portion of the substrate and away from the middle area through an exhausting device. A carrier gas supply may be also provided to blow a carrier gas against the middle area of the substrate. The carrier gas is then conducted from the middle area to the edge portion of the substrate so that the carrier gas prevents the activated gas from moving around to the middle area of the substrate.Other References
Field of SearchCENTRIFUGAL FORCE UTILIZEDCleaning or removing part of substrate (e.g., etching with plasma, glow discharge, etc.) Plasma (e.g., cold plasma, corona, glow discharge, etc.) Oxygen containing atmosphere Organic substrate Depositing organic material (e.g., polymer, etc.) With substrate handling during coating (e.g., immersion, spinning, etc.) Combined with the removal of material by nonchemical means Combined with coating step By creating electric field (e.g., plasma, glow discharge, etc.) Reactive ion beam etching (i.e., RIBE) With substrate handling (e.g., conveying, etc.) Silicon oxide or glass Organic material (e.g., resist, etc.) Using specified electrode/susceptor configuration (e.g., of multiple substrates using barrel-type susceptor, planar reactor configuration, etc.) to generate plasma Producing energized gas remotely located from substrate Differential etching of semiconductor substrate Silicon oxide or glass Plasma cleaning Semiconductor cleaning Semiconductor cleaning Using plasma Specific configuration of electrodes to generate the plasma FORMING OR TREATING ARTICLE CONTAINING A LIQUID CRYSTAL MATERIAL | |
