Process of fabricating semiconductor device having gettering site layer between insulating layer and active semiconductor layer
Patent 6001711 Issued on December 14, 1999. Estimated Expiration Date: 
March 9, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
March 9, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.InventorAssigneeApplicationNo. 037322 filed on 03/09/1998US Classes:438/473, By implanting or irradiating257/E21.32, Of silicon on insulator (SOI) (EPO)257/E21.372, Bipolar thin film transistor (EPO)257/E21.537, Making of localized buried regions, e.g., buried collector layer, internal connection, substrate contacts (EPO)438/407, Nondopant implantation438/455, BONDING OF PLURAL SEMICONDUCTOR SUBSTRATES438/459, Thinning of semiconductor substrate438/517, Of semiconductor layer on insulating substrate or layer438/526Forming buried regionExaminersPrimary: Tsai, JeyAssistant: Ghyka, Alexander Attorney, Agent or FirmForeign Patent References
International ClassH01L 021/326Foreign Application Priority Data1997-03-12 JPAbstractPhosphorous ion is implanted into an SOI substrate under the conditions that the concentration is maximized in the upper silicon layer of the SOI substrate so as to forming a heavily-doped damaged layer, and the heavily-doped damaged layer is partially cured through a lamp annealing so as to concurrently form a heavily-doped buried layer and a gettering site layer.Other References
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