Preparation of carbide nanorods
March 7, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3246950 3447952 Chemical vapor deposition process for producing metal carbide or nitride whiskers Chemical vapor deposition reactor for producing metal carbide or nitride whiskers Process for the preparation of silicon carbide whiskers Process for producing silicon carbide and metal carbides Metal carbide, nitride, or carbonitride whiskers coated with metal carbides, nitrides, carbonitrides, or oxides Method of forming a carbide on a carbon substrate Production of silicon carbide whiskers using a seeding component to determine shape and size of whiskers Process for preparing an impermeable carbon fiber reinforcing type of composite material Patent #: 5244609 InventorsAssigneeApplicationNo. 814745 filed on 03/07/1997US Classes:423/249, RADIOACTIVE (AT. NO. 84+ OR RADIOACTIVE ISOTOPE OF ANOTHER ELEMENT)423/263, RARE EARTH COMPOUND (AT. NO. 21, 39, OR 57-71)423/345, Of carbon (i.e., silicon carbide)423/346, By reacting vapor phase silicon compound with carbon or carbon containing compound423/439, Binary compound (e.g., carbide, etc.)423/440Refractory metal containingExaminersPrimary: Griffin, Steven P.Assistant: Hendrickson, Stuart L. Attorney, Agent or FirmForeign Patent References
International ClassC01B 031/30AbstractA process utilizing a supported metal catalyst, a volatile species source, and a carbon source has been developed to produce carbide nanorods with diameters of less than about 100 nm and aspect ratios of 10 to 1000. The volatile species source, carbon source, and supported metal catalyst can be used to produce carbide nanorods in single run, batch, and continuous reactors under relatively mild conditions. The method employs a simple catalytic process involving readily available starting materials.Other References
Field of SearchBinary compound (e.g., carbide, etc.)Refractory metal containing Of carbon (i.e., silicon carbide) By reacting vapor phase silicon compound with carbon or carbon containing compound RARE EARTH COMPOUND (AT. NO. 21, 39, OR 57-71) RADIOACTIVE (AT. NO. 84+ OR RADIOACTIVE ISOTOPE OF ANOTHER ELEMENT) Coating decomposed to form carbide or coating carbonized Silicon carbide And boride, silicide, nitride, or oxynitride |
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