Method and apparatus for measuring electrical noise in devices
Patent 5970429 Issued on October 19, 1999. Estimated Expiration Date: 
August 8, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
August 8, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of measuring FET noise parameters Measuring integrity of semiconductor multi-layer metal structures Method for reliability testing integrated circuit metal films Method for detecting defects in semiconductor insulators Method for detecting defects in semiconductor insulators Patent #: 5798649 InventorApplicationNo. 907760 filed on 08/08/1997US Classes:702/65, Including related electrical parameter324/613, Noise702/57Electrical signal parameter measurement systemExaminersPrimary: Assouad, PatrickInternational ClassG01R 029/26AbstractA method and apparatus for measuring electrical noise in devices is disclosed that comprises two distinct measurement phases. In one phase, the differential output resistance, rab, between a first terminal, a, and a second terminal, b, of the device under test is measured. In the second phase, a voltage, VL (t), is measured across a load resistance, RL, that is in series with the first terminal, a, of the device under test. Then the output voltage noise spectral density, SVL, is determined based on a fourier transform of the voltage, VL (t); and the output current noise spectral density, Sia, is determined based on the output voltage noise spectral density, SVL, the load resistance, RL, and the differential output resistance, rab.Other References
Field of SearchElectrical signal parameter measurement systemIncluding related electrical parameter Signal quality (e.g., timing jitter, distortion, signal-to-noise ratio) Using Fourier method With probe elements Bipolar transistor Field effect transistor IMPEDANCE, ADMITTANCE OR OTHER QUANTITIES REPRESENTATIVE OF ELECTRICAL STIMULUS/RESPONSE RELATIONSHIPS Noise | |
