Microelectromechanical structure and process of making same
October 3, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesScanning tunneling microscope Method and apparatus for dry processing of substrates Method of making an integrated scanning tunneling microscope Memory device with dual cantilever means Integrated micromechanical piezoelectric motor Process for producing multilayer interconnection for semiconductor device with interlayer mechanical stress prevention and insulating layers Method of dry etching in semiconductor device processing Microvibratory memory device Methods of fabricating integrated, aligned tunneling tip pairs Integrated circuit micro-fabrication using dry lithographic processes InventorsAssigneeApplicationNo. 943663 filed on 10/03/1997US Classes:438/52, Having cantilever element438/700, Formation of groove or trench438/710, By creating electric field (e.g., plasma, glow discharge, etc.)438/745Liquid phase etchingExaminersPrimary: Mulpuri, SavitriAttorney, Agent or FirmForeign Patent References
International ClassH01L 021/44AbstractThe present invention is directed to a process for fabricating a microelectromechanical device from a substrate carrying at least one layer of a non-erodible material laid out to form at least a portion of the microelectromechanical device, at least one layer of an erodible material, and at least one sacrificial layer. The process includes the step of using the layer of non-erodible material as a mask and anistropically etching any of the layer of erodible material not occluded by the layer of non-erodible material. The process also includes the step of isotropically etching the sacrificial layer under at least a beam portion of the microelectromechanical device to free the beam portion of the microelectromechanical device from the substrate.Field of SearchINSPECTION OF SOLIDS OR LIQUIDS BY CHARGED PARTICLESMethods Semiconductive Low workfunction layer for electron emission (e.g., photocathode electron emissive layer) ETCHING OF SEMICONDUCTOR MATERIAL TO PRODUCE AN ARTICLE HAVING A NONELECTRICAL FUNCTION FORMING OR TREATING AN ARTICLE WHOSE FINAL CONFIGURATION HAS A PROJECTION Tapered configuration Having cantilever element Vapor phase etching (i.e., dry etching) Silicon Silicon oxide or glass Selectively etching substrate possessing multiple layers of differing etch characteristics Lateral etching of intermediate layer (i.e., undercutting) Liquid phase etching Silicon Silicon oxide By creating electric field (e.g., plasma, glow discharge, etc.) Formation of groove or trench To facilitate selective etching SPECIFIED ETCH STOP MATERIAL | |
