Method of producing tandem solar cell devices from sheets of crystalline material
Semiconductor member and process for preparing semiconductor member
Process for the production of thin semiconductor material films
Method for preparing semiconductor member
Method for placing semiconductive plates on a support
Method for manufacturing semiconductor substrate
Method for producing semiconductor substrate Patent #: 5854123
ApplicationNo. 970356 filed on 11/14/1997
US Classes:438/455, BONDING OF PLURAL SEMICONDUCTOR SUBSTRATES257/E21.237, Mechanical treatment, e.g., grinding, polishing, cutting (EPO)257/E21.32, Of silicon on insulator (SOI) (EPO)257/E21.568, With separation/delamination along ion implanted layer, e.g., "Smart-cut", "Unibond" (EPO)257/E21.57, With separation/delamination along porous layer (EPO)438/458Subsequent separation into plural bodies (e.g., delaminating, dicing, etc.)
ExaminersPrimary: Picardat, Kevin M.
Attorney, Agent or Firm
Foreign Patent References
International ClassesH01L 021/30
Foreign Application Priority Data1996-11-15 JP
AbstractA novel process for producing a semiconductor article is disclosed which comprises the steps of preparing a first substrate constituted of a silicon substrate, a nonporous semiconductor layer formed on the silicon substrate, and an ion implantation layer formed in at least one of the silicon substrate and the nonporous semiconductor layer; bonding the first substrate to a second substrate to obtain a multiple layer structure with the nonporous semiconductor layer placed inside; separating the multiple layer structure at the ion implantation layer; and removing the ion implantation layer remaining on the separated second substrate.