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ICP reactor having a conically-shaped plasma-generating section

Patent 5964949 Issued on October 12, 1999. Estimated Expiration Date: Icon_subject March 5, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Method and apparatus for producing magnetically-coupled planar plasma
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Plasma generating apparatus employing capacitive shielding and process for using such apparatus
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Induction plasma source
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Coil configurations for improved uniformity in inductively coupled plasma systems
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Induction plasma source
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Method of treating a workpiece with a plasma and processing reactor having plasma igniter and inductive coupler for semiconductor fabrication
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Inventor: Hanawa

Inductively coupled high density plasma reactor for plasma assisted materials processing
Patent #: 5540800
Issued on: 07/30/1996
Inventor: Qian

Plasma reactor with multi-section RF coil and isolated conducting lid
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Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source
Patent #: 5556521
Issued on: 09/17/1996
Inventor: Ghanbari

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Inventor

Assignee

Application

No. 811893 filed on 03/05/1997

US Classes:

118/723I, Radio frequency antenna or radio frequency inductive coil discharge means156/345.48With radio frequency (rf) antenna or inductive coil gas energizing means

Examiners

Primary: Breneman, R. Bruce
Assistant: Alejandro, Luz

Attorney, Agent or Firm

Foreign Patent References

  • 0 694 949 A2 EP 01/18/1996
  • 6-196446 JP. 07/18/1994
  • WO 91/10341 WO 07/18/1991

International Class

C23C 016/00

Abstract

Disclosed is an inductively-coupled plasma reactor that is useful for anisotropic or isotropic etching of a substrate, or chemical vapor deposition of a material onto a substrate. The reactor has a plasma-generation chamber with a conically-shaped plasma-generating portion and coils that are arranged around the plasma-generating portion in a conical spiral. The chamber and coil may be configured to produce a highly uniform plasma potential across the entire surface of the substrate to promote uniform ion bombardment for ion enhanced processing. In addition, a conical chamber and coil configuration may be used to produce activated neutral species at varying diameters in a chamber volume for non-ion enhanced processing. Such a configuration promotes the uniform diffusion of the activated neutral species across the wafer surface.

Other References

  • Corresponding PCT application No. PCT/US97/04756 filed Mar. 5, 1997, PCT International Search Report, citing the above-listed references
  • N. Shoda et al., "Water Absorption Study of High Density Plasma CVD Oxide Films," Feb. 20-21, 1996 DUMIC Conference, 1996 ISMIC--111D/96/0013
  • M. Tuszewski et al., "Composition of the oxygen plasmas from two inductively coupled sources," J. Vac. Sci. Technol. A 13(3), May/Jun. 1995, pp. 839-842
  • P. N. Wainman et al., "Characterization at different aspect ratios (radius/length) of a radio frequency inductively coupled plasma source," J. Vac. Sci. Technol. A 13(5), Sep./Oct. 1995, pp. 2464-246
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