Bulk and strained silicon on insulator using local selective oxidation
Patent 5963817 Issued on October 5, 1999. Estimated Expiration Date: 
October 16, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
October 16, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSemiconductor processing methods of forming field oxidation regions on a semiconductor substrate Method of forming silicon dioxide film containing germanium nanocrystals Patent #: 5783498 InventorsApplicationNo. 951827 filed on 10/16/1997US Classes:438/410, Encroachment of separate locally oxidized regions257/E21.564, SOI together with lateral isolation, e.g., using local oxidation of silicon, or dielectric or polycrystalline material refilled trench or air gap isolation regions, e.g., completely isolated semiconductor islands (EPO)438/439Recessed oxide by localized oxidation (i.e., LOCOS)ExaminersPrimary: Dutton, BrianAttorney, Agent or FirmInternational ClassH01L 021/76AbstractA method for forming buried oxide regions below a single crystal semiconductor layer incorporating the steps of forming epitaxial layers having different rates of oxidation with the lower layer having a faster rate of oxidation and oxidizing the layers through an opening in a mask. A plurality of oxide isolated FET's may be formed. The invention reduces the problem of source/drain parasitic capacitance and short channel effects while isolating FET's and eliminating floating body effects of an FET by selectively oxidizing semiconductor layers.Other References
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