Active pixel image cell with embedded memory and pixel level signal processing capability
Patent 5962844 Issued on October 5, 1999. Estimated Expiration Date: 
September 3, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
September 3, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesPhotoelectric converting circuit having an amplification factor Imaging active pixel device having a non-destructive read-out gate Single-polysilicon CMOS active pixel Single split-gate MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range Combined photogate and photodiode active pixel image sensor Patent #: 5739562 InventorsApplicationNo. 923370 filed on 09/03/1997US Classes:250/214A, Amplifier type250/208.1, Plural photosensitive image detecting element arrays257/222, Responsive to non-electrical external signal (e.g., imager)257/225, Non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.)257/431, Light257/E27.132, Pixel-elements with integrated switching, control, storage, or amplification elements (EPO)348/308Including switching transistor and photocell at each pixel site (e.g., "MOS-type" image sensor)ExaminersPrimary: Lee, John D.Attorney, Agent or FirmInternational ClassesH01L 027/148H04N 005/335 AbstractAn active pixel image cell which includes a photosensor and an embedded memory element and may be used to produce signals corresponding to the photosensor outputs for successive frames. The structure of the active pixel cell includes an analog, non-volatile, or dynamic memory element and the control elements needed to store the output of the photosensor generated during a previous frame. The pixel elements then generate a signal representing the current frame output of the photosensor. The current frame output and previous frame output are then provided as output signals for the pixel and may be subjected to off-pixel processing as desired. For example, the two values may be subtracted from one another by an off-pixel difference amplifier to form a signal representing the difference between the image on the photodiode sensor of the pixel between successive frames. The difference signal may then be used for purposes of video compression, motion detection, or image stabilization.Other References
Field of SearchAmplifier typeSpecial photocell or electron tube circuits Plural photosensitive image detecting element arrays Plural photosensitive nonimage detecting elements Responsive to non-electrical external signal (e.g., imager) Non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.) Sensor element and charge transfer device are of different materials or on different substrates (e.g., "hybrid") Light responsive, back illuminated 2-dimensional area architecture Sensors not overlaid by electrode (e.g., photodiodes) Light Matrix or array (e.g., single line arrays) Light responsive pn junction Including switching transistor and photocell at each pixel site (e.g., "MOS-type" image sensor) X - Y architecture Solid-state image sensor | |
