Fabrication and method of producing silicon films
Patent 5952061 Issued on September 14, 1999. Estimated Expiration Date: 
December 22, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
December 22, 2017. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod for the deposition of coatings upon substrates utilizing a high pressure, non-local thermal equilibrium arc plasma Apparatus and process for arc vapor depositing a coating in an evacuated chamber Patent #: 4929322 InventorsAssigneeApplicationNo. 996197 filed on 12/22/1997US Classes:427/580, Electrical discharge (e.g., arcs, sparks, etc.)204/192.38, Vacuum arc discharge coating427/585, Chemical vapor deposition (e.g., electron beam or heating using IR, inductance, resistance, etc.)427/588Silicon or semiconductor material containing coatingExaminersPrimary: Meeks, TimothyAttorney, Agent or FirmForeign Patent References
International ClassC23C 016/24Foreign Application Priority Data1996-12-27 JPAbstractThe present invention is an apparatus and method for the fabrication of high quality silicon films by deposition of a silicon vapor onto a substrate. The silicon film fabrication apparatus includes a chamber, a crucible having an anode for melting a silicon metal, an anode for generating a DC arc discharge plasma, a substrate holder facing the crucible, and a heater for heating a substrate arranged in the substrate holder. The apparatus also includes a variable DC power supply, a cathode element including an electrode plate for generating the DC arc discharge plasma, a gas intake pipe penetrating through the electrode plate into the chamber, and an exhaust pipe having a valve facing the gas intake pipe. The silicon film is fabricated by disposing a substrate in a chamber, introducing hydrogen gas into the chamber, generating the DC arc discharge plasma, evaporating the silicon metal in the chamber, and depositing the silicon vapor on the substrate after the vapor passes through the DC arc discharge plasma.Field of SearchSilicon containing coating materialElectrical discharge (e.g., arcs, sparks, etc.) Chemical vapor deposition (e.g., electron beam or heating using IR, inductance, resistance, etc.) Silicon or semiconductor material containing coating Silicon containing coating Vacuum arc discharge coating |
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