Enhanced CVD copper adhesion by two-step deposition process
Patent 5948467 Issued on September 7, 1999. Estimated Expiration Date: July 24, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
257/E21.585, Filling of holes, grooves, vias or trenches with conductive material (EPO)427/124, Vapor deposition or utilizing vacuum427/250, Metal coating427/255.7Plural coatings applied by vapor, gas, or smoke
A method of enhancing copper adhesion to a substrate includes preparing a single-crystal silicon substrate; forming integrated circuit components on active areas of the substrate; metallizing the integrated circuit components, including metallizing a first copper layer by low-rate CVD, and metallizing a second copper layer by high-rate CVD; and finalizing construction of the structure.
N. Awaya et al., Evaluation of Copper Metallization Process and the Electrical Characteristics of Copper Interconnected Quarter-Micron CMOS, IEEE Trans. Electron Dev. 43 (1996) p.120