Enhanced CVD copper adhesion by two-step deposition process
Patent 5948467 Issued on September 7, 1999. Estimated Expiration Date: 
July 24, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
July 24, 2018. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.InventorsAssigneeApplicationNo. 122346 filed on 07/24/1998US Classes:257/E21.585, Filling of holes, grooves, vias or trenches with conductive material (EPO)427/124, Vapor deposition or utilizing vacuum427/250, Metal coating427/255.7Plural coatings applied by vapor, gas, or smokeExaminersPrimary: Talbot, Brian K.Attorney, Agent or FirmInternational ClassB05D 005/12AbstractA method of enhancing copper adhesion to a substrate includes preparing a single-crystal silicon substrate; forming integrated circuit components on active areas of the substrate; metallizing the integrated circuit components, including metallizing a first copper layer by low-rate CVD, and metallizing a second copper layer by high-rate CVD; and finalizing construction of the structure.Other References
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